Details
Manufacturer No PDTA114YS,126
Manufacturer NXP USA Inc.
Category Pre-Biased BJT Transistors
Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Datasheet Datasheet
Description
Price
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Type
Parameter
RoHS
yes
Mount
Width
Height
Length
Pbfree
hFE Min
HTS Code
Polarity
ECCN Code
Inventory
1375
Lead Free
Packaging
Tape & Box (TB)
Pin Count
Published
2009
Part Status
Obsolete
Power - Max
500mW
RoHS Status
ROHS3 Compliant
Subcategory
JESD-30 Code
JESD-609 Code
Mounting Type
Through Hole
Terminal Form
Current Rating
Number of Pins
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Contact Plating
Terminal Finish
Transistor Type
PNP - Pre-Biased
Base Part Number
PDTA114
Factory Lead Time
Power Dissipation
Terminal Position
Additional Feature
Number of Elements
Voltage - Rated DC
Qualification Status
Resistor - Base (R1)
10 k Ω
Element Configuration
Max Breakdown Voltage
Max Collector Current
Max Power Dissipation
Reach Compliance Code
Number of Terminations
Transistor Application
Supplier Device Package
Max Operating Temperature
Min Operating Temperature
Emitter Base Voltage (VEBO)
Transistor Element Material
Continuous Collector Current
Resistor - Emitter Base (R2)
47 k Ω
Peak Reflow Temperature (Cel)
Vce Saturation (Max) @ Ib, Ic
100mV @ 250μA, 5mA
Current - Collector (Ic) (Max)
100mA
Collector Emitter Voltage (VCEO)
Current - Collector Cutoff (Max)
1μA
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Collector Emitter Breakdown Voltage
Collector Emitter Saturation Voltage
Time@Peak Reflow Temperature-Max (s)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 5mA 5V
Voltage - Collector Emitter Breakdown (Max)
50V
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Qty
Unit Price
Total Price
16997
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