Details
Manufacturer No PDTA114TS,126
Manufacturer NXP USA Inc.
Category Pre-Biased BJT Transistors
Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Datasheet Datasheet
Description
Price
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Type
Parameter
RoHS
yes
Mount
Width
Height
Length
Series
HTS Code
8541.21.00.95
ECCN Code
EAR99
Inventory
10033
Packaging
Tape & Box (TB)
Pin Count
3
Published
2007
Part Status
Obsolete
Power - Max
500mW
RoHS Status
ROHS3 Compliant
Subcategory
JESD-30 Code
O-PBCY-T3
Configuration
SINGLE WITH BUILT-IN RESISTOR
JEDEC-95 Code
JESD-609 Code
e3
Mounting Type
Through Hole
Surface Mount
NO
Terminal Form
Number of Pins
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Terminal Finish
TIN
Transistor Type
PNP - Pre-Biased
Base Part Number
PDTA114
Factory Lead Time
Terminal Position
BOTTOM
Additional Feature
BUILT-IN BIAS RESISTOR
Number of Elements
1
Qualification Status
Not Qualified
Resistor - Base (R1)
10 k Ω
Transition Frequency
Max Breakdown Voltage
Max Collector Current
Max Power Dissipation
Polarity/Channel Type
PNP
Reach Compliance Code
Frequency - Transition
Number of Terminations
3
Transistor Application
SWITCHING
Supplier Device Package
DC Current Gain-Min (hFE)
Max Operating Temperature
Min Operating Temperature
Emitter Base Voltage (VEBO)
Operating Temperature (Max)
150°C
Power Dissipation-Max (Abs)
Transistor Element Material
SILICON
Resistor - Emitter Base (R2)
Peak Reflow Temperature (Cel)
NOTSPECIFIED
Vce Saturation (Max) @ Ib, Ic
150mV @ 500μA, 10mA
Current - Collector (Ic) (Max)
100mA
Collector Emitter Voltage (VCEO)
Current - Collector Cutoff (Max)
1μA
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Collector Emitter Breakdown Voltage
Collector Emitter Saturation Voltage
Time@Peak Reflow Temperature-Max (s)
NOTSPECIFIED
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 1mA 5V
Voltage - Collector Emitter Breakdown (Max)
50V
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Qty
Unit Price
Total Price
16985
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