PDTA114TS,126

Details

Manufacturer No PDTA114TS,126

Manufacturer NXP USA Inc.

Category Pre-Biased BJT Transistors

Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Datasheet Datasheet

Description

Price

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Type

Parameter

  • RoHS

    yes

  • Mount

  • Width

  • Height

  • Length

  • Series

  • HTS Code

    8541.21.00.95

  • ECCN Code

    EAR99

  • Inventory

    10033

  • Packaging

    Tape & Box (TB)

  • Pin Count

    3

  • Published

    2007

  • Part Status

    Obsolete

  • Power - Max

    500mW

  • RoHS Status

    ROHS3 Compliant

  • Subcategory

  • JESD-30 Code

    O-PBCY-T3

  • Configuration

    SINGLE WITH BUILT-IN RESISTOR

  • JEDEC-95 Code

  • JESD-609 Code

    e3

  • Mounting Type

    Through Hole

  • Surface Mount

    NO

  • Terminal Form

  • Number of Pins

  • Package / Case

    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

  • Terminal Finish

    TIN

  • Transistor Type

    PNP - Pre-Biased

  • Base Part Number

    PDTA114

  • Factory Lead Time

  • Terminal Position

    BOTTOM

  • Additional Feature

    BUILT-IN BIAS RESISTOR

  • Number of Elements

    1

  • Qualification Status

    Not Qualified

  • Resistor - Base (R1)

    10 k Ω

  • Transition Frequency

  • Max Breakdown Voltage

  • Max Collector Current

  • Max Power Dissipation

  • Polarity/Channel Type

    PNP

  • Reach Compliance Code

  • Frequency - Transition

  • Number of Terminations

    3

  • Transistor Application

    SWITCHING

  • Supplier Device Package

  • DC Current Gain-Min (hFE)

  • Max Operating Temperature

  • Min Operating Temperature

  • Emitter Base Voltage (VEBO)

  • Operating Temperature (Max)

    150°C

  • Power Dissipation-Max (Abs)

  • Transistor Element Material

    SILICON

  • Resistor - Emitter Base (R2)

  • Peak Reflow Temperature (Cel)

    NOTSPECIFIED

  • Vce Saturation (Max) @ Ib, Ic

    150mV @ 500μA, 10mA

  • Current - Collector (Ic) (Max)

    100mA

  • Collector Emitter Voltage (VCEO)

  • Current - Collector Cutoff (Max)

    1μA

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Collector Emitter Breakdown Voltage

  • Collector Emitter Saturation Voltage

  • Time@Peak Reflow Temperature-Max (s)

    NOTSPECIFIED

  • DC Current Gain (hFE) (Min) @ Ic, Vce

    200 @ 1mA 5V

  • Voltage - Collector Emitter Breakdown (Max)

    50V

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Qty

Unit Price

Total Price

16985

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