Details
Manufacturer No PDTA114TEF,115
Manufacturer NXP USA Inc.
Category Pre-Biased BJT Transistors
Package SC-89, SOT-490
Datasheet Datasheet
Description
Price
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Type
Parameter
RoHS
yes
Mount
Pbfree
HTS Code
Polarity
ECCN Code
EAR99
Inventory
17251
Lead Free
Packaging
Tape & Reel (TR)
Pin Count
3
Published
2007
Part Status
Obsolete
Power - Max
150mW
RoHS Status
ROHS3 Compliant
Subcategory
JESD-30 Code
R-PDSO-F3
Configuration
SINGLE WITH BUILT-IN RESISTOR
JESD-609 Code
e3
Mounting Type
Surface Mount
Surface Mount
YES
Terminal Form
FLAT
Current Rating
Number of Pins
Package / Case
SC-89, SOT-490
Terminal Finish
TIN
Transistor Type
PNP - Pre-Biased
Base Part Number
PDTA114
Terminal Position
DUAL
Additional Feature
BUILT IN BIAS RESISTOR
Number of Elements
1
Voltage - Rated DC
Radiation Hardening
Qualification Status
Not Qualified
Resistor - Base (R1)
10 k Ω
Transition Frequency
Element Configuration
Max Breakdown Voltage
Max Collector Current
Max Power Dissipation
Polarity/Channel Type
PNP
Reach Compliance Code
Frequency - Transition
Number of Terminations
3
Transistor Application
SWITCHING
Supplier Device Package
Max Operating Temperature
Min Operating Temperature
Operating Temperature (Max)
150°C
Power Dissipation-Max (Abs)
Transistor Element Material
SILICON
Resistor - Emitter Base (R2)
Peak Reflow Temperature (Cel)
Vce Saturation (Max) @ Ib, Ic
150mV @ 500μA, 10mA
Current - Collector (Ic) (Max)
100mA
Collector Emitter Voltage (VCEO)
Current - Collector Cutoff (Max)
1μA
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Collector Emitter Breakdown Voltage
Time@Peak Reflow Temperature-Max (s)
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 1mA 5V
Voltage - Collector Emitter Breakdown (Max)
50V
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Qty
Unit Price
Total Price
21101
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