Details
Manufacturer No PDTA113ES,126
Manufacturer NXP USA Inc.
Category Pre-Biased BJT Transistors
Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Datasheet Datasheet
Description
Price
Call
Type
Parameter
RoHS
yes
Mount
Width
Height
Length
hFE Min
HTS Code
Polarity
ECCN Code
Inventory
2568
Lead Free
Packaging
Tape & Box (TB)
Pin Count
Published
2009
Part Status
Obsolete
Power - Max
500mW
RoHS Status
ROHS3 Compliant
Subcategory
JESD-30 Code
JEDEC-95 Code
JESD-609 Code
Mounting Type
Through Hole
Terminal Form
Current Rating
Number of Pins
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Terminal Finish
Transistor Type
PNP - Pre-Biased
Base Part Number
PDTA113
Factory Lead Time
Power Dissipation
Terminal Position
Additional Feature
Number of Elements
Voltage - Rated DC
Qualification Status
Resistor - Base (R1)
1 k Ω
Element Configuration
Max Breakdown Voltage
Max Collector Current
Max Power Dissipation
Polarity/Channel Type
Reach Compliance Code
Frequency - Transition
Number of Terminations
Transistor Application
Supplier Device Package
Max Operating Temperature
Min Operating Temperature
Transistor Element Material
Continuous Collector Current
Resistor - Emitter Base (R2)
1 k Ω
Peak Reflow Temperature (Cel)
Vce Saturation (Max) @ Ib, Ic
150mV @ 1.5mA, 30mA
Current - Collector (Ic) (Max)
100mA
Collector Emitter Voltage (VCEO)
Current - Collector Cutoff (Max)
1μA
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Collector Emitter Breakdown Voltage
Collector Emitter Saturation Voltage
Time@Peak Reflow Temperature-Max (s)
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 40mA 5V
Voltage - Collector Emitter Breakdown (Max)
50V
Send RFQ
Qty
Unit Price
Total Price
16998
call
call
As a leader in the electronic components industry, we are committed to providing the most comprehensive and accurate electronic component information and supplier prices.
Payment Method