Details
Manufacturer No NESG2030M04-A
Manufacturer CEL
Category RF BJT Transistors
Package SOT-343F
Datasheet Datasheet
Description
Price
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Type
Parameter
Gain
16dB
RoHS
yes
Mount
Surface Mount
Width
Height
Length
Pbfree
Weight
hFE Min
HTS Code
Polarity
NPN
ECCN Code
Frequency
60GHz
Inventory
4572
Lead Free
Lead Free
Packaging
Bulk
Pin Count
Published
Part Status
Obsolete
Power - Max
80mW
RoHS Status
RoHS Compliant
Subcategory
JESD-30 Code
Output Power
60mW
Configuration
JESD-609 Code
Mounting Type
Surface Mount
Terminal Form
Current Rating
Number of Pins
4
Package / Case
SOT-343F
Case Connection
Contact Plating
Terminal Finish
Transistor Type
NPN
Base Part Number
NESG2030
Lifecycle Status
Factory Lead Time
Power Dissipation
80mW
Terminal Position
Number of Elements
1
Voltage - Rated DC
Radiation Hardening
Qualification Status
Transition Frequency
Element Configuration
Max Collector Current
Max Power Dissipation
Operating Temperature
150°CTJ
Polarity/Channel Type
Reach Compliance Code
Frequency - Transition
60GHz
Gain Bandwidth Product
Highest Frequency Band
Number of Terminations
Transistor Application
Supplier Device Package
M04
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Noise Figure (dB Typ @ f)
0.9dB ~ 1.1dB @ 2GHz
Emitter Base Voltage (VEBO)
1.2V
Transistor Element Material
Continuous Collector Current
Collector Base Voltage (VCBO)
8V
Peak Reflow Temperature (Cel)
Collector-Base Capacitance-Max
Current - Collector (Ic) (Max)
35mA
Collector Emitter Voltage (VCEO)
2.3V
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Collector Emitter Breakdown Voltage
Collector Emitter Saturation Voltage
Time@Peak Reflow Temperature-Max (s)
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 5mA 2V
Voltage - Collector Emitter Breakdown (Max)
2.3V
Send RFQ
Qty
Unit Price
Total Price
28393
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