Details
Manufacturer No NE85633L-A
Manufacturer CEL
Category RF BJT Transistors
Package TO-236-3, SC-59, SOT-23-3
Datasheet Datasheet
Description
Price
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Type
Parameter
Gain
9dB
RoHS
yes
Mount
Surface Mount
Pbfree
Weight
1.437803g
hFE Min
HTS Code
Polarity
NPN
ECCN Code
Frequency
Inventory
11735
Lead Free
Packaging
Bulk
Pin Count
Published
Part Status
Obsolete
Power - Max
200mW
RoHS Status
RoHS Compliant
Subcategory
JESD-30 Code
Output Power
Configuration
JESD-609 Code
Max Frequency
Mounting Type
Surface Mount
Surface Mount
Terminal Form
Number of Pins
Package / Case
TO-236-3, SC-59, SOT-23-3
Case Connection
Contact Plating
Terminal Finish
Transistor Type
NPN
Base Part Number
NE85633
Lifecycle Status
Factory Lead Time
Power Dissipation
Terminal Position
Additional Feature
Number of Elements
Radiation Hardening
Qualification Status
Transition Frequency
Element Configuration
Single
Max Collector Current
100mA
Max Power Dissipation
200mW
Operating Temperature
150°CTJ
Polarity/Channel Type
Reach Compliance Code
Frequency - Transition
7GHz
Highest Frequency Band
Number of Terminations
Transistor Application
Supplier Device Package
SOT-23
Noise Figure (dB Typ @ f)
1.4dB ~ 2dB @ 1GHz
Emitter Base Voltage (VEBO)
3V
Operating Temperature (Max)
Power Dissipation-Max (Abs)
Transistor Element Material
Continuous Collector Current
100mA
Collector Base Voltage (VCBO)
Peak Reflow Temperature (Cel)
Collector-Base Capacitance-Max
Current - Collector (Ic) (Max)
100mA
Collector Emitter Voltage (VCEO)
12V
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Collector Emitter Breakdown Voltage
12V
Time@Peak Reflow Temperature-Max (s)
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 20mA 10V
Voltage - Collector Emitter Breakdown (Max)
12V
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Unit Price
Total Price
26673
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