Details
Manufacturer No MT3S111TU,LF
Manufacturer Toshiba Semiconductor and Storage
Category Transistors - Bipolar (BJT) - RF
Package 3-SMD, Flat Lead
Datasheet Datasheet
Description RF SIGE NPN BIPOLAR TRANSISTOR N
Price
$0.58
Type
Parameter
Mfr
Toshiba Semiconductor and Storage
Gain
12.5dB
Series
-
Package
Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Power - Max
800mW
Mounting Type
Surface Mount
Package / Case
3-SMD, Flat Lead
Product Status
Active
Transistor Type
NPN
Base Product Number
MT3S111
Operating Temperature
150°C(TJ)
Frequency - Transition
10GHz
Supplier Device Package
UFM
Noise Figure (dB Typ @ f)
0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
Current - Collector (Ic) (Max)
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 30mA, 5V
Voltage - Collector Emitter Breakdown (Max)
6V
Send RFQ
Qty
Unit Price
Total Price
1
$0.5626
$0.5626
50
$0.5336
$26.68
100
$0.5162
$51.62
1000
$0.493
$493
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