MT3S04S

Details

Manufacturer No MT3S04S

Manufacturer Toshiba America Electronic Components

Category RF Small Signal Bipolar Transistors

Datasheet Datasheet

Description TRANSISTOR RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal

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Type

Parameter

YTEOL

7
Objectid

1480363533
ECCN Code

EAR99
Risk Rank

7.55
Subcategory

Other Transistors
JESD-30 Code

R-PDSO-G3
Configuration

SINGLE
Package Shape

RECTANGULAR
Package Style

SMALL OUTLINE
Surface Mount

YES
Terminal Form

GULL WING
Terminal Position

DUAL
Additional Feature

LOW NOISE
Number of Elements

1
Source Content uid

MT3S04S
Number of Terminals

3
Package Description

SMALL OUTLINE, R-PDSO-G3
Part Life Cycle Code

Active
Qualification Status

Not Qualified
Package Body Material

PLASTIC/EPOXY
Polarity/Channel Type

NPN
Reach Compliance Code

unknown
Highest Frequency Band

ULTRA HIGH FREQUENCY BAND
Transistor Application

AMPLIFIER
DC Current Gain-Min (hFE)

80
Operating Temperature-Max

125°C
Collector Current-Max (IC)

0.1 A
Power Dissipation-Max (Abs)

0.15 W
Transistor Element Material

SILICON
Collector-Emitter Voltage-Max

5 V
Transition Frequency-Nom (fT)

7000 MHz
Collector-Base Capacitance-Max

1.15 pF

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Qty

Unit Price

Total Price

17553

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