MS2212

Details

Manufacturer No MS2212

Manufacturer Microsemi Corporation

Category Transistors - Bipolar (BJT) - RF

Package M222

Datasheet Datasheet

Description RF TRANS NPN 55V 1.215GHZ M222

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Type

Parameter

  • Mfr

    Microsemi Corporation

  • Gain

    8.1dB ~ 8.9dB

  • Series

    -

  • Package

    Bulk

  • Power - Max

    50W

  • Mounting Type

    Chassis Mount

  • Package / Case

    M222

  • Product Status

    Obsolete

  • Transistor Type

    NPN

  • Operating Temperature

    250°C(TJ)

  • Frequency - Transition

    960MHz ~ 1.215GHz

  • Supplier Device Package

    M222

  • Noise Figure (dB Typ @ f)

    -

  • Current - Collector (Ic) (Max)

    1.8A

  • DC Current Gain (hFE) (Min) @ Ic, Vce

    15 @ 500mA, 5V

  • Voltage - Collector Emitter Breakdown (Max)

    55V

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Qty

Unit Price

Total Price

1507

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AJT015

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RF Power Bipolar Transistor, 1Element, L Band, Silicon, NPN, FM-2

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AM80912-015

Advanced Semiconductor

RF Power Bipolar Transistor, 1Element, L Band, Silicon, NPN, HERMETIC SEALED, FM-2

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