Details
Manufacturer No MS1532
Manufacturer Advanced Power Technology
Category RF Power Bipolar Transistors
Datasheet Datasheet
Description RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, HERMETIC SEALED, M119, 3 PIN
Price
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Type
Parameter
Objectid
1943533270
ECCN Code
EAR99
Risk Rank
8.74
Subcategory
Other Transistors
JESD-30 Code
R-CDFM-F4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Surface Mount
YES
Terminal Form
FLAT
Case Connection
EMITTER
Terminal Position
DUAL
Additional Feature
WITH EMITTER BALLASTING RESISTORS
Number of Elements
1
Number of Terminals
4
Package Description
FLANGE MOUNT, R-CDFM-F4
Part Life Cycle Code
Obsolete
Qualification Status
Not Qualified
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
NPN
Reach Compliance Code
unknown
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Transistor Application
AMPLIFIER
DC Current Gain-Min (hFE)
25
Operating Temperature-Max
200°C
Collector Current-Max (IC)
11 A
Power Dissipation-Max (Abs)
88.8 W
Transistor Element Material
SILICON
Collector-Emitter Voltage-Max
28 V
Collector-Base Capacitance-Max
36 pF
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Qty
Unit Price
Total Price
2388
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