MRW2010

Details

Manufacturer No MRW2010

Manufacturer Motorola Semiconductor Products

Category RF Power Bipolar Transistors

Datasheet Datasheet

Description RF Power Bipolar Transistor, 1-Element, S Band, Silicon, NPN

Price

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Type

Parameter

  • Objectid

    1404806510

  • ECCN Code

    EAR99

  • Risk Rank

    8.53

  • JESD-30 Code

    O-CRFM-F2

  • Configuration

    SINGLE

  • Package Shape

    ROUND

  • Package Style

    FLANGE MOUNT

  • Surface Mount

    NO

  • Terminal Form

    FLAT

  • Case Connection

    BASE

  • Terminal Position

    RADIAL

  • Additional Feature

    DIFFUSED BALLAST RESISTORS

  • Number of Elements

    1

  • Number of Terminals

    2

  • Power Gain-Min (Gp)

    7 dB

  • Part Life Cycle Code

    Obsolete

  • Qualification Status

    Not Qualified

  • Package Body Material

    CERAMIC, METAL-SEALED COFIRED

  • Polarity/Channel Type

    NPN

  • Reach Compliance Code

    unknown

  • Highest Frequency Band

    S BAND

  • Transistor Application

    AMPLIFIER

  • DC Current Gain-Min (hFE)

    10

  • Operating Temperature-Max

    200°C

  • Collector Current-Max (IC)

    2 A

  • Transistor Element Material

    SILICON

  • Collector-Base Capacitance-Max

    12 pF

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Qty

Unit Price

Total Price

2527

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Substitute Products

ASI2010

Advanced Semiconductor Inc

RF Power Bipolar Transistor, 1-Element, S Band, Silicon, NPN, 0.250 INCH, HERMETIC SEALED, FM-2

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SD1893-03

STMicroelectronics

L BAND, Si, NPN, RF POWER TRANSISTOR, 0.230 INCH, HERMETIC SEALED, M151, 2 PIN

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MSC82010

STMicroelectronics

L BAND, Si, NPN, RF POWER TRANSISTOR, 0.250 INCH, HERMETIC SEALED, S010, STRIPAC-2

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