Details
Manufacturer No MRF315
Manufacturer Motorola Semiconductor Products
Category RF Power Bipolar Transistors
Datasheet Datasheet
Description RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN
Price
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Type
Parameter
HTS Code
8541.29.00.75
ECCN Code
EAR99
Rohs Code
No
Popularity
0
Subcategory
Other Transistors
JESD-30 Code
O-CRFM-F4
Configuration
SINGLE
JESD-609 Code
e0
Package Shape
ROUND
Package Style
FLANGE MOUNT
Surface Mount
NO
Terminal Form
FLAT
Terminal Finish
TIN LEAD
Terminal Position
RADIAL
Additional Feature
HIGH RELIABILITY
Number of Elements
1
Number of Terminals
4
Package Description
FLANGE MOUNT, O-CRFM-F4
Power Gain-Min (Gp)
9 dB
Part Life Cycle Code
Obsolete
Qualification Status
Not Qualified
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
NPN
Reach Compliance Code
unknown
Highest Frequency Band
VERY HIGH FREQUENCY BAND
Transistor Application
AMPLIFIER
DC Current Gain-Min (hFE)
20
Operating Temperature-Max
150°C
Collector Current-Max (IC)
4 A
Power Dissipation-Max (Abs)
110 W
Transistor Element Material
SILICON
Collector-Emitter Voltage-Max
35 V
Power Dissipation Ambient-Max
110 W
Transition Frequency-Nom (fT)
200 MHz
Collector-Base Capacitance-Max
60 pF
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Unit Price
Total Price
14743
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