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MPSA14,116

Details

Manufacturer No MPSA14,116

Manufacturer NXP USA Inc.

Category Single BJT Transistors

Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Datasheet Datasheet

Description

Price

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Type

Parameter

  • RoHS

    yes

  • Mount

  • Width

  • Height

  • Length

  • Pbfree

    yes

  • Weight

  • Current

  • Voltage

  • hFE Min

  • HTS Code

    8541.21.00.95

  • Polarity

  • ECCN Code

  • Frequency

  • Inventory

    7435

  • Lead Free

  • Packaging

    Tape & Reel (TR)

  • Pin Count

    3

  • Published

    2007

  • REACH SVHC

  • VCEsat-Max

    1.5 V

  • Part Status

    Obsolete

  • Power - Max

    500mW

  • RoHS Status

    ROHS3 Compliant

  • Subcategory

    Other Transistors

  • Termination

  • JESD-30 Code

    O-PBCY-T3

  • Configuration

  • JESD-609 Code

    e3

  • Max Frequency

  • Mounting Type

    Through Hole

  • Surface Mount

    NO

  • Terminal Form

  • Current Rating

  • Number of Pins

  • Package / Case

    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

  • Case Connection

  • Contact Plating

  • Terminal Finish

    Matte Tin (Sn)

  • Transistor Type

    NPN - Darlington

  • Base Part Number

    MPSA14

  • Lifecycle Status

  • Factory Lead Time

  • Power Dissipation

  • Terminal Position

    BOTTOM

  • Additional Feature

  • Number of Elements

    1

  • Voltage - Rated DC

  • Radiation Hardening

  • Qualification Status

    Not Qualified

  • Transition Frequency

    125MHz

  • Element Configuration

  • Max Breakdown Voltage

  • Max Collector Current

  • Max Power Dissipation

  • Operating Temperature

    150°CTJ

  • Polarity/Channel Type

    NPN

  • Reach Compliance Code

  • Frequency - Transition

    125MHz

  • Gain Bandwidth Product

  • Number of Terminations

    3

  • Transistor Application

    AMPLIFIER

  • Turn On Time-Max (ton)

  • Supplier Device Package

  • Turn Off Time-Max (toff)

  • Max Operating Temperature

  • Min Operating Temperature

  • Emitter Base Voltage (VEBO)

  • Power Dissipation-Max (Abs)

  • Transistor Element Material

    SILICON

  • Continuous Collector Current

  • Collector Base Voltage (VCBO)

  • Peak Reflow Temperature (Cel)

    NOTSPECIFIED

  • Vce Saturation (Max) @ Ib, Ic

    1.5V @ 100μA, 100mA

  • Collector-Base Capacitance-Max

  • Current - Collector (Ic) (Max)

    500mA

  • Collector Emitter Voltage (VCEO)

  • Current - Collector Cutoff (Max)

    100nA ICBO

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Collector Emitter Breakdown Voltage

  • Collector Emitter Saturation Voltage

  • Time@Peak Reflow Temperature-Max (s)

    NOTSPECIFIED

  • DC Current Gain (hFE) (Min) @ Ic, Vce

    20000 @ 100mA 5V

  • Voltage - Collector Emitter Breakdown (Max)

    30V

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Qty

Unit Price

Total Price

9308

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call

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