RoHS

yes

Mount

Width

Height

Length

Pbfree

yes

Series

Weight

hFE Min

HTS Code

8541.21.00.95

Polarity

ECCN Code

EAR99

Frequency

Inventory

8279

Lead Free

Packaging

Bulk

Pin Count

3

Published

1996

REACH SVHC

VCEsat-Max

0.25 V

Part Status

Obsolete

Power - Max

625mW

RoHS Status

ROHS3 Compliant

Subcategory

Other Transistors

JESD-30 Code

O-PBCY-T3

Configuration

SINGLE

JEDEC-95 Code

JESD-609 Code

e3

Mounting Type

Through Hole

Surface Mount

NO

Current Rating

Number of Pins

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Case Connection

Contact Plating

Terminal Finish

Matte Tin (Sn)

Transistor Type

NPN

Base Part Number

MPSA06

Lifecycle Status

Factory Lead Time

Power Dissipation

Terminal Position

BOTTOM

Additional Feature

Number of Elements

1

Voltage - Rated DC

Radiation Hardening

Qualification Status

Not Qualified

Transition Frequency

100MHz

Element Configuration

Max Collector Current

Max Power Dissipation

Operating Temperature

150°CTJ

Polarity/Channel Type

NPN

Reach Compliance Code

unknown

Frequency - Transition

100MHz

Gain Bandwidth Product

Number of Terminations

3

Transistor Application

SWITCHING

Turn On Time-Max (ton)

Supplier Device Package

Turn Off Time-Max (toff)

Max Operating Temperature

Min Operating Temperature

Emitter Base Voltage (VEBO)

Power Dissipation-Max (Abs)

0.625W

Transistor Element Material

SILICON

Collector Base Voltage (VCBO)

Peak Reflow Temperature (Cel)

NOTSPECIFIED

Vce Saturation (Max) @ Ib, Ic

250mV @ 10mA, 100mA

Collector-Base Capacitance-Max

Current - Collector (Ic) (Max)

500mA

Collector Emitter Voltage (VCEO)

Current - Collector Cutoff (Max)

50nA ICBO

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Time@Peak Reflow Temperature-Max (s)

NOTSPECIFIED

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 100mA 1V

Voltage - Collector Emitter Breakdown (Max)

80V