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MMBFJ310LT1
Details
Manufacturer No MMBFJ310LT1
Manufacturer Motorola Semiconductor Products
Category RF Small Signal Field-Effect Transistors
Datasheet Datasheet
Description RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-236AB
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Type
Parameter
HTS Code
8541.21.00.75
ECCN Code
EAR99
Rohs Code
No
Popularity
0
Subcategory
Other Transistors
JESD-30 Code
R-PDSO-G3
Configuration
SINGLE
JEDEC-95 Code
TO-236AB
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
JUNCTION
Operating Mode
DEPLETION MODE
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
3
Package Description
SMALL OUTLINE, R-PDSO-G3
Part Life Cycle Code
Transferred
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Reach Compliance Code
unknown
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Transistor Application
AMPLIFIER
Feedback Cap-Max (Crss)
2.5 pF
DS Breakdown Voltage-Min
25 V
Operating Temperature-Max
150°C
Power Dissipation-Max (Abs)
0.225 W
Transistor Element Material
SILICON
Power Dissipation Ambient-Max
0.225 W
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Unit Price
Total Price
14512
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