MMBFJ309LT1

Details

Manufacturer No MMBFJ309LT1

Manufacturer Motorola Semiconductor Products

Category RF Small Signal Field-Effect Transistors

Description RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-236AB

Price

$0.74

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Type

Parameter

HTS Code

8541.21.00.75
ECCN Code

EAR99
Rohs Code

No
Popularity

0
Subcategory

Other Transistors
JESD-30 Code

R-PDSO-G3
Configuration

SINGLE
JEDEC-95 Code

TO-236AB
JESD-609 Code

e0
Package Shape

RECTANGULAR
Package Style

SMALL OUTLINE
Surface Mount

YES
Terminal Form

GULL WING
FET Technology

JUNCTION
Operating Mode

DEPLETION MODE
Terminal Finish

Tin/Lead (Sn/Pb)
Terminal Position

DUAL
Number of Elements

1
Number of Terminals

3
Package Description

SMALL OUTLINE, R-PDSO-G3
Part Life Cycle Code

Transferred
Qualification Status

Not Qualified
Package Body Material

PLASTIC/EPOXY
Polarity/Channel Type

N-CHANNEL
Reach Compliance Code

unknown
Highest Frequency Band

ULTRA HIGH FREQUENCY BAND
Transistor Application

AMPLIFIER
Feedback Cap-Max (Crss)

2.5 pF
DS Breakdown Voltage-Min

25 V
Operating Temperature-Max

150°C
Power Dissipation-Max (Abs)

0.225 W
Transistor Element Material

SILICON
Power Dissipation Ambient-Max

0.225 W

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Qty

Unit Price

Total Price

$0.7178

$0.6808

$34.04

100

$0.6586

$65.86

1000

$0.629

$629

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