MJE800STU

Details

Manufacturer No MJE800STU

Manufacturer onsemi

Category Transistors - Bipolar (BJT) - Single

Package TO-225AA, TO-126-3

Datasheet Datasheet

Description TRANS NPN DARL 60V 4A TO126-3

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Type

Parameter

  • Mfr

    onsemi

  • Series

    -

  • Package

    Tube

  • Power - Max

    40 W

  • Mounting Type

    Through Hole

  • Package / Case

    TO-225AA, TO-126-3

  • Product Status

    Obsolete

  • Transistor Type

    NPN - Darlington

  • Base Product Number

    MJE800

  • Operating Temperature

    150°C(TJ)

  • Frequency - Transition

    -

  • Supplier Device Package

    TO-126-3

  • Vce Saturation (Max) @ Ib, Ic

    2.5V @ 30mA, 1.5A

  • Current - Collector (Ic) (Max)

    4 A

  • Current - Collector Cutoff (Max)

    100µA

  • DC Current Gain (hFE) (Min) @ Ic, Vce

    750 @ 1.5A, 3V

  • Voltage - Collector Emitter Breakdown (Max)

    60 V

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Qty

Unit Price

Total Price

5152

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Substitute Products

KSE800STU

ON Semiconductor

NPN Epitaxial Silicon Darlington Transistor, 1920-TUBE

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KSE800S

Fairchild Semiconductor Corporation

Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, LEAD FREE, TO-126, 3 PIN

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KSE800STSSTU

Fairchild Semiconductor Corporation

Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, LEAD FREE, TO-126, 3 PIN

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MJE801STU

Fairchild Semiconductor Corporation

Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin,

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MJE800

ON Semiconductor

4.0 A, 60 V NPN Darlington Bipolar Power Transistor, TO-225, 500-BLKBX

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KSE801STU

Fairchild Semiconductor Corporation

Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin,

Send RFQ
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