MJE13005G-A-TQ3-R

Details

Manufacturer No MJE13005G-A-TQ3-R

Manufacturer Unisonic Technologies Co Ltd

Category Power Bipolar Transistors

Datasheet Datasheet

Description Power Bipolar Transistor, 4A I(C), NPN

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Type

Parameter

YTEOL

2
Objectid

1164813281
ECCN Code

EAR99
Risk Rank

7.16
Rohs Code

No
Subcategory

Other Transistors
JESD-30 Code

R-PSSO-G2
Configuration

SINGLE
JEDEC-95 Code

TO-263AB
Package Shape

RECTANGULAR
Package Style

SMALL OUTLINE
Surface Mount

YES
Terminal Form

GULL WING
Terminal Position

SINGLE
Number of Elements

1
Number of Terminals

2
Package Description

SMALL OUTLINE, R-PSSO-G2
Part Life Cycle Code

Active
Package Body Material

PLASTIC/EPOXY
Polarity/Channel Type

NPN
Reach Compliance Code

compliant
Transistor Application

SWITCHING
DC Current Gain-Min (hFE)

15
Operating Temperature-Max

150°C
Operating Temperature-Min

-65°C
Collector Current-Max (IC)

4 A
Power Dissipation-Max (Abs)

75 W
Transistor Element Material

SILICON
Collector-Emitter Voltage-Max

400 V
Transition Frequency-Nom (fT)

4 MHz

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Qty

Unit Price

Total Price

4090

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