MJE13003L-H-A-TN3-T

Details

Manufacturer No MJE13003L-H-A-TN3-T

Manufacturer Unisonic Technologies Co Ltd

Category Power Bipolar Transistors

Datasheet Datasheet

Description Power Bipolar Transistor,

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Type

Parameter

YTEOL

7.8
HTS Code

8541.29.00.95
Objectid

8313538390
ECCN Code

EAR99
Risk Rank

6.99
Rohs Code

Yes
JESD-30 Code

R-PSSO-G2
Configuration

SINGLE
JEDEC-95 Code

TO-252
Package Shape

RECTANGULAR
Package Style

SMALL OUTLINE
Surface Mount

YES
Terminal Form

GULL WING
Case Connection

COLLECTOR
Terminal Position

SINGLE
Number of Elements

1
Number of Terminals

2
Package Description

SMALL OUTLINE, R-PSSO-G2
Part Life Cycle Code

Active
Package Body Material

PLASTIC/EPOXY
Polarity/Channel Type

NPN
Reach Compliance Code

compliant
Transistor Application

SWITCHING
DC Current Gain-Min (hFE)

14
Operating Temperature-Max

150°C
Collector Current-Max (IC)

1.5 A
Transistor Element Material

SILICON
Collector-Emitter Voltage-Max

400 V
Peak Reflow Temperature (Cel)

NOTSPECIFIED
Power Dissipation Ambient-Max

1.56 W
Transition Frequency-Nom (fT)

10 MHz
Time@Peak Reflow Temperature-Max (s)

NOTSPECIFIED

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Qty

Unit Price

Total Price

4087

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MJE13003G-H-A-TN3-R

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MJE13003G-A-TN3-R

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Power Bipolar Transistor, 1.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin,

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MJE13003L-A-TN3-R

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Power Bipolar Transistor, 1.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin,

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MJE13003L-A-TN3-T

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Power Bipolar Transistor, 1.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin,

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MJE13003G-V-A-TN3-R

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MJE13003G-P-A-TN3-R

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