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MJD42C

Details

Manufacturer No MJD42C

Manufacturer Continental Device India Ltd

Category Power Bipolar Transistors

Datasheet Datasheet

Description Power Bipolar Transistor,

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Type

Parameter

  • HTS Code

    8541.29.00.95

  • ECCN Code

    EAR99

  • Rohs Code

    Yes

  • Popularity

    556

  • VCEsat-Max

    2 V

  • JESD-30 Code

    R-PSSO-G2

  • Configuration

    SINGLE

  • JEDEC-95 Code

    TO-252

  • Package Shape

    RECTANGULAR

  • Package Style

    SMALL OUTLINE

  • Surface Mount

    YES

  • Terminal Form

    GULL WING

  • Terminal Position

    SINGLE

  • Number of Elements

    1

  • Reference Standard

    IATF 16949

  • Number of Terminals

    2

  • Part Life Cycle Code

    Active

  • Package Body Material

    PLASTIC/EPOXY

  • Polarity/Channel Type

    PNP

  • Reach Compliance Code

    unknown

  • Transistor Application

    SWITCHING

  • DC Current Gain-Min (hFE)

    25

  • Operating Temperature-Max

    150°C

  • Collector Current-Max (IC)

    6 A

  • Power Dissipation-Max (Abs)

    18 W

  • Transistor Element Material

    SILICON

  • Collector-Emitter Voltage-Max

    100 V

  • Power Dissipation Ambient-Max

    18 W

  • Transition Frequency-Nom (fT)

    3 MHz

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Total Price

11188

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