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MJD340G-I
Details
Manufacturer No MJD340G-I
Manufacturer ON Semiconductor
Category Power Bipolar Transistors
Datasheet Datasheet
Description Power Bipolar Transistor
Price
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Type
Parameter
YTEOL
5.4
HTS Code
8541.29.00.95
Objectid
145014648409
ECCN Code
EAR99
Risk Rank
6.79
JESD-30 Code
R-PSIP-T3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
IN-LINE
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Number of Elements
1
Source Content uid
MJD340G-I
Number of Terminals
3
Package Description
IN-LINE, R-PSIP-T3
Part Life Cycle Code
Active
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Reach Compliance Code
compliant
DC Current Gain-Min (hFE)
30
Operating Temperature-Max
150°C
Collector Current-Max (IC)
0.5 A
Power Dissipation-Max (Abs)
15 W
Transistor Element Material
SILICON
Collector-Emitter Voltage-Max
300 V
Power Dissipation Ambient-Max
1.56 W
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Qty
Unit Price
Total Price
1643
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