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MJD29C-1
Details
Manufacturer No MJD29C-1
Manufacturer Samsung Semiconductor
Category Power Bipolar Transistors
Datasheet Datasheet
Description Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, IPAK-3
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Type
Parameter
HTS Code
8541.29.00.95
Objectid
1415635050
ECCN Code
EAR99
Pin Count
3
Risk Rank
9.82
Rohs Code
No
VCEsat-Max
0.7 V
Subcategory
Other Transistors
JESD-30 Code
R-PSIP-T3
Configuration
SINGLE
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
IN-LINE
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Description
IN-LINE, R-PSIP-T3
Part Life Cycle Code
Obsolete
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Reach Compliance Code
unknown
Transistor Application
AMPLIFIER
DC Current Gain-Min (hFE)
15
Operating Temperature-Max
150°C
Collector Current-Max (IC)
1 A
Power Dissipation-Max (Abs)
15 W
Transistor Element Material
SILICON
Collector-Emitter Voltage-Max
100 V
Power Dissipation Ambient-Max
15 W
Transition Frequency-Nom (fT)
3 MHz
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Unit Price
Total Price
11430
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