MJD13005-1

Details

Manufacturer No MJD13005-1

Manufacturer STMicroelectronics

Category RF Power Bipolar Transistors

Datasheet Datasheet

Description Si, NPN, RF POWER TRANSISTOR, TO-251

Price

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Type

Parameter

Objectid

1439748382
ECCN Code

EAR99
Risk Rank

9.66
Rohs Code

Yes
Subcategory

Other Transistors
JESD-30 Code

R-PSIP-T3
Configuration

SINGLE
JEDEC-95 Code

TO-251
JESD-609 Code

e3
Package Shape

RECTANGULAR
Package Style

IN-LINE
Surface Mount

NO
Terminal Form

THROUGH-HOLE
Terminal Finish

MATTE TIN
Terminal Position

SINGLE
Additional Feature

HIGH RELIABILITY, HIGH VOLTAGE
Number of Elements

1
Source Content uid

MJD13005-1
Number of Terminals

3
Part Life Cycle Code

Obsolete
Qualification Status

Not Qualified
Package Body Material

PLASTIC/EPOXY
Polarity/Channel Type

NPN
Reach Compliance Code

not_compliant
Transistor Application

SWITCHING
DC Current Gain-Min (hFE)

8
Operating Temperature-Max

150°C
Collector Current-Max (IC)

4 A
Power Dissipation-Max (Abs)

30 W
Transistor Element Material

SILICON
Collector-Emitter Voltage-Max

400 V

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Qty

Unit Price

Total Price

4039

call

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