LBC850BLT1G

Details

Manufacturer No LBC850BLT1G

Manufacturer LRC Leshan Radio Co Ltd

Category Other Diodes

Package SOT-23

Datasheet Datasheet

Description Device Marking:2F, IC (mA):100, VCEO (V):45, hFE Min / Max:200/450, hFE IC/VCE (mA)/(Volts): 2/5

Price

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Type

Parameter

YTEOL

7.5
IC (mA)

100
Package

SOT-23
Objectid

1221213604
Polarity

NPN
VCEO (V)

45
ECCN Code

EAR99
Risk Rank

8.56
Subcategory

Other Transistors
fT TYP(MHz)

100
JESD-30 Code

R-PDSO-G3
三级类别

3 Pin General Purpose Transistors
二级类别

GENERAL PURPOSE TRANSISTORS
Configuration

SINGLE
JESD-609 Code

e3
Package Shape

RECTANGULAR
Package Style

SMALL OUTLINE
Surface Mount

YES
Terminal Form

GULL WING
hFE Min / Max

200/450
Device Marking

2F
Terminal Finish

Tin (Sn)
Country Of Origin

Mainland China
Terminal Position

DUAL
Number of Elements

1
Number of Terminals

3
Package Description

SMALL OUTLINE, R-PDSO-G3
VCE(sat) IC/IB (mA)

100/5
Part Life Cycle Code

Active
VCE(sat) Max (Volts)

0.6
Package Body Material

PLASTIC/EPOXY
Polarity/Channel Type

NPN
Reach Compliance Code

unknown
hFE IC/VCE (mA)/(Volts)

2/5
DC Current Gain-Min (hFE)

200
Operating Temperature-Max

150°C
Collector Current-Max (IC)

0.1 A
Moisture Sensitivity Level

1
Power Dissipation-Max (Abs)

0.225 W
Transistor Element Material

SILICON
Collector-Emitter Voltage-Max

45 V
Transition Frequency-Nom (fT)

100 MHz

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Qty

Unit Price

Total Price

472

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