Details
Manufacturer No KSH44H11-TF
Manufacturer Samsung Semiconductor
Category Power Bipolar Transistors
Datasheet Datasheet
Description Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
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Type
Parameter
HTS Code
8541.29.00.75
ECCN Code
EAR99
Popularity
1
VCEsat-Max
1 V
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Description
SMALL OUTLINE, R-PSSO-G2
Part Life Cycle Code
Obsolete
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Reach Compliance Code
unknown
Transistor Application
SWITCHING
DC Current Gain-Min (hFE)
40
Operating Temperature-Max
150°C
Collector Current-Max (IC)
8 A
Transistor Element Material
SILICON
Collector-Emitter Voltage-Max
80 V
Power Dissipation Ambient-Max
20 W
Transition Frequency-Nom (fT)
50 MHz
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Qty
Unit Price
Total Price
20466
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