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KSD2012-G

Details

Manufacturer No KSD2012-G

Manufacturer Samsung Semiconductor

Category Power Bipolar Transistors

Datasheet Datasheet

Description Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220F, 3 PIN

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Type

Parameter

  • HTS Code

    8541.29.00.95

  • Objectid

    1437068542

  • ECCN Code

    EAR99

  • Pin Count

    3

  • Risk Rank

    9.8

  • Rohs Code

    No

  • VCEsat-Max

    1 V

  • Subcategory

    Other Transistors

  • JESD-30 Code

    R-PSFM-T3

  • Configuration

    SINGLE

  • JESD-609 Code

    e0

  • Package Shape

    RECTANGULAR

  • Package Style

    FLANGE MOUNT

  • Surface Mount

    NO

  • Terminal Form

    THROUGH-HOLE

  • Case Connection

    ISOLATED

  • Terminal Finish

    Tin/Lead (Sn/Pb)

  • Part Package Code

    TO-220F

  • Terminal Position

    SINGLE

  • Number of Elements

    1

  • Number of Terminals

    3

  • Package Description

    TO-220F, 3 PIN

  • Part Life Cycle Code

    Obsolete

  • Qualification Status

    Not Qualified

  • Package Body Material

    PLASTIC/EPOXY

  • Polarity/Channel Type

    NPN

  • Reach Compliance Code

    unknown

  • Transistor Application

    AMPLIFIER

  • DC Current Gain-Min (hFE)

    150

  • Operating Temperature-Max

    150°C

  • Collector Current-Max (IC)

    3 A

  • Power Dissipation-Max (Abs)

    25 W

  • Transistor Element Material

    SILICON

  • Collector-Emitter Voltage-Max

    60 V

  • Power Dissipation Ambient-Max

    25 W

  • Transition Frequency-Nom (fT)

    3 MHz

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Unit Price

Total Price

1055

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