JANTX1N5617US

Details

Manufacturer No JANTX1N5617US

Manufacturer Microchip Technology

Category Diodes - Rectifiers - Single

Datasheet Datasheet

Description DIODE GEN PURP 400V 1A D-5A

Price

$8.1

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Type

Parameter

  • Mfr

    Microchip Technology

  • Speed

    Fast Recovery =< 500ns, > 200mA (Io)

  • Series

    Military, MIL-PRF-19500/429

  • Package

    Bulk

  • Diode Type

    Standard

  • Mounting Type

    Surface Mount

  • Package / Case

    SQ-MELF, A

  • Product Status

    Active

  • Base Product Number

    1N5617

  • Capacitance @ Vr, F

    35pF @ 12V, 1MHz

  • Supplier Device Package

    D-5A

  • Reverse Recovery Time (trr)

    150 ns

  • Current - Reverse Leakage @ Vr

    500 µA @ 400 V

  • Voltage - DC Reverse (Vr) (Max)

    400 V

  • Current - Average Rectified (Io)

    1A

  • Operating Temperature - Junction

    -65°C ~ 175°C

  • Voltage - Forward (Vf) (Max) @ If

    1.6 V @ 3 A

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Qty

Unit Price

Total Price

1

$7.857

$7.857

50

$7.452

$372.6

100

$7.209

$720.9

1000

$6.885

$6885

Substitute Products

JANTXV1N5617US

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JAN1N5617US

Microchip Technology

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1N5617US

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JAN1N5617UL

Defense Logistics Agency

Rectifier Diode

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JANS1N5617US

Defense Supply Center Columbus

DIODE 1 A, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode

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JANTXV1N5617UL

Sensitron Semiconductors

Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, HERMETIC SEALED, MELF-2

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1N5617US

Sensitron Semiconductors

Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, HERMETIC SEALED, GLASS PACKAGE-2

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1N5617UL

Sensitron Semiconductors

Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, HERMETIC SEALED, MELF-2

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JANTXV1N5617US

Microsemi Corporation

Rectifier Diode, 1 Element, 1A, Silicon, HERMETIC SEALED, GLASS PACKAGE-2

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1N5617ULV

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JANS1N5617US

Microsemi

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JANTXV1N5617US

Microsemi

Diode Switching 400V 1A 2Pin A-MELF

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JAN1N5617US

Microsemi

Diode Gen Purp 400V 1A D5a

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1N5617USV

Sensitron Semiconductors

Rectifier Diode, 1 Element, 1A, Silicon

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1N5617USX

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