JAN1N6631US

Details

Manufacturer No JAN1N6631US

Manufacturer Microchip Technology

Category Diodes - Rectifiers - Single

Datasheet Datasheet

Description DIODE GEN PURP 1.1KV 1.4A D-5B

Price

$18.45

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Type

Parameter

  • Mfr

    Microchip Technology

  • Speed

    Fast Recovery =< 500ns, > 200mA (Io)

  • Series

    Military, MIL-PRF-19500/590

  • Package

    Bulk

  • Diode Type

    Standard

  • Mounting Type

    Surface Mount

  • Package / Case

    E-MELF

  • Product Status

    Active

  • Base Product Number

    1N6631

  • Capacitance @ Vr, F

    40pF @ 10V, 1MHz

  • Supplier Device Package

    D-5B

  • Reverse Recovery Time (trr)

    60 ns

  • Current - Reverse Leakage @ Vr

    4 µA @ 1100 V

  • Voltage - DC Reverse (Vr) (Max)

    1100 V

  • Current - Average Rectified (Io)

    1.4A

  • Operating Temperature - Junction

    -65°C ~ 150°C

  • Voltage - Forward (Vf) (Max) @ If

    1.6 V @ 1.4 A

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Qty

Unit Price

Total Price

1

$17.8965

$17.8965

50

$16.974

$848.7

100

$16.4205

$1642.05

1000

$15.6825

$15682.5

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SPD6631BS

Solid State Devices Inc (SSDI)

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SPD6631BTX

Solid State Devices Inc (SSDI)

Rectifier Diode, 1 Phase, 1 Element, 2.8A, 1000V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2

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JAN1N6631U

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Rectifier Diode, 1 Phase, 1 Element, 1.4A, 1000V V(RRM), Silicon, HERMETIC, MELF-B, 2 PIN

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SPD6631SMSS

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SPD6631TXV

Solid State Devices Inc (SSDI)

Rectifier Diode, 1 Phase, 1 Element, 2.8A, 1000V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2

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SPD6631SMSTXV

Solid State Devices Inc (SSDI)

Rectifier Diode, 1 Phase, 1 Element, 2.8A, 1000V V(RRM), Silicon, HERMETIC SEALED, SMS, 2 PIN

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SPD6631S

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Rectifier Diode, 1 Phase, 1 Element, 2.8A, 1000V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2

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SPD6631BTXV

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Rectifier Diode, 1 Phase, 1 Element, 2.8A, 1000V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2

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SPD6631B

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Rectifier Diode, 1 Phase, 1 Element, 2.8A, 1000V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2

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