IXTV280N055TS

Details

Manufacturer No IXTV280N055TS

Manufacturer IXYS

Category Transistors - FETs, MOSFETs - Single

Package PLUS-220SMD

Datasheet Datasheet

Description MOSFET N-CH 55V 280A PLUS-220SMD

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Type

Parameter

Mfr

IXYS
Series

TrenchMV™
Package

Tube
FET Type

N-Channel
Vgs (Max)

±20V
Technology

MOSFET (Metal Oxide)
FET Feature

-
Mounting Type

Surface Mount
Package / Case

PLUS-220SMD
Product Status

Obsolete
Vgs(th) (Max) @ Id

4V @ 250µA
Base Product Number

IXTV280
Operating Temperature

-55°C~175°C(TJ)
Rds On (Max) @ Id, Vgs

3.2mOhm @ 50A, 10V
Power Dissipation (Max)

550W (Tc)
Supplier Device Package

PLUS-220SMD
Gate Charge (Qg) (Max) @ Vgs

200 nC @ 10 V
Drain to Source Voltage (Vdss)

55 V
Input Capacitance (Ciss) (Max) @ Vds

9800 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)

10V
Current - Continuous Drain (Id) @ 25°C

280A (Tc)

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Qty

Unit Price

Total Price

5265

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Substitute Products

IXTH260N055T2

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IXTA260N055T2-7

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Mosfet n-Ch 55V 260A To-263

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IXTP260N055T2

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Mosfet n-Ch 55V 260A To-220

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IXTA260N055T2

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IXTA240N055T7

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IXTH260N055T2

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IXTH280N055T

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Power Field-Effect Transistor, 280A I(D), 55V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC, TO-247, 3 PIN

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IXTA240N055T

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Power Field-Effect Transistor, 240A I(D), 55V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, TO-263, 6 PIN

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IXTV280N055T

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Power Field-Effect Transistor, 280A I(D), 55V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS220, 3 PIN

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IXTQ240N055T

IXYS Corporation

Power Field-Effect Transistor, 240A I(D), 55V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3PIN

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IXTP260N055T2

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Power Field-Effect Transistor,

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IXTH240N055T

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Power Field-Effect Transistor, 240A I(D), 55V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN

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