IXTP80N10T

Details

Manufacturer No IXTP80N10T

Manufacturer IXYS

Category Transistors - FETs, MOSFETs - Single

Package TO-220-3

Datasheet Datasheet

Description MOSFET N-CH 100V 80A TO220AB

Price

$3.44

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Type

Parameter

Mfr

IXYS
Series

Trench
Package

Tube
FET Type

N-Channel
Vgs (Max)

±20V
Technology

MOSFET (Metal Oxide)
FET Feature

-
Mounting Type

Through Hole
Package / Case

TO-220-3
Product Status

Active
Vgs(th) (Max) @ Id

5V @ 100µA
Base Product Number

IXTP80
Operating Temperature

-55°C~175°C(TJ)
Rds On (Max) @ Id, Vgs

14mOhm @ 25A, 10V
Power Dissipation (Max)

230W (Tc)
Supplier Device Package

TO-220-3
Gate Charge (Qg) (Max) @ Vgs

60 nC @ 10 V
Drain to Source Voltage (Vdss)

100 V
Input Capacitance (Ciss) (Max) @ Vds

3040 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)

10V
Current - Continuous Drain (Id) @ 25°C

80A (Tc)

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Qty

Unit Price

Total Price

$3.3368

$3.1648

$158.24

100

$3.0616

$306.16

1000

$2.924

$2924

Substitute Products

IXFT80N10

IXYS Semiconductor

TO-268 N-CH 100V 80A

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IPB70N10S3L-12

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IXFH80N10

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TO-247AD N-CH 100V 80A

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IRHNA57160SCVPBF

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Power Field-Effect Transistor, 75A I(D), 100V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD1, 3 PIN

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IXTA80N10T7

IXYS Corporation

Power Field-Effect Transistor, 80A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, TO-263, 7 PIN

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FMC80N10T2

Fuji Electric Co Ltd

Power Field-Effect Transistor, 80A I(D), 100V, 0.0128ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD, TPACK-3

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IPB70N10S3L12ATMA1

Infineon Technologies AG

Power Field-Effect Transistor, 70A I(D), 100V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN

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IXFH80N10

Littelfuse Inc

Power Field-Effect Transistor, 80A I(D), 100V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN

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IXFT80N10

IXYS Corporation

Power Field-Effect Transistor, 80A I(D), 100V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268, TO-268, 3 PIN

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