Details
Manufacturer No IRLR8256TRLPBF
Manufacturer International Rectifier
Category Power Field-Effect Transistors
Datasheet Datasheet
Description Power Field-Effect Transistor, 81A I(D), 25V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3
Price
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Type
Parameter
ECCN Code
EAR99
Pin Count
3
Rohs Code
Yes
Popularity
2
Pbfree Code
Yes
Subcategory
FET General Purpose Power
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-252AA
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
MATTE TIN OVER NICKEL
Part Package Code
TO-252AA
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Description
SMALL OUTLINE, R-PSSO-G2
Part Life Cycle Code
Obsolete
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Reach Compliance Code
compliant
Drain Current-Max (ID)
81 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
25 V
Operating Temperature-Max
175°C
Moisture Sensitivity Level
1
Power Dissipation-Max (Abs)
63 W
Transistor Element Material
SILICON
Drain Current-Max (Abs) (ID)
81 A
Avalanche Energy Rating (Eas)
86 mJ
Drain-source On Resistance-Max
0.0057 Ω
Pulsed Drain Current-Max (IDM)
325 A
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Qty
Unit Price
Total Price
17378
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