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IRFS4229
Details
Manufacturer No IRFS4229
Manufacturer infineon
Category N-Channel Power MOSFET
Package D2PAK (TO-263)
Datasheet Datasheet
Description
Price
$4.55
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Type
Parameter
Package
D2PAK (TO-263)
Mounting
SMD
Polarity
N
Q<sub>gd</sub>
26.0nC
Battery voltage
144-200 V
T<sub>j</sub> max
175.0°C
V<sub>DS</sub> max
250.0V
V<sub>GS</sub> max
30.0V
P<sub>tot</sub> max
330.0W
R<sub>thJC</sub> max
0.45K/W
Budgetary Price €/1k
1.95
Q<sub>G</sub>(typ @10V)
72.0nC
I<sub>D </sub>(@25°C) max
45.0A
Moisture Sensitivity Level
1
V<sub>GS(th)</sub> min max
4.0V 3.0V 5.0V
Operating Temperature min max
-40.0°C175.0°C
R<sub>DS (on)</sub>(@10V) max
48.0mΩ
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Qty
Unit Price
Total Price
1
$4.4135
$4.4135
50
$4.186
$209.3
100
$4.0495
$404.95
1000
$3.8675
$3867.5
Substitute Products
IRFS4229PBF
International Rectifier
Power Field-Effect Transistor, 45A I(D), 250V, 0.048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3
Send RFQ
IRFS4229TRLPBF
Infineon Technologies AG
Power Field-Effect Transistor, 45A I(D), 250V, 0.048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3
Send RFQ
IRFS4229TRRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 45A I(D), 250V, 0.048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3
Send RFQ
IRFS4229TRR
International Rectifier
Power Field-Effect Transistor, 45A I(D), 250V, 0.048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3
Send RFQ
Feature Products
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