Details
Manufacturer No IRFI624B
Manufacturer Fairchild Semiconductor Corporation
Category Power Field-Effect Transistors
Package IN-LINE, R-PSIP-T3
Datasheet Datasheet
Description Power Field-Effect Transistor, 4.1A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, I2PAK-3
Price
Call
Type
Parameter
YTEOL
0
Objectid
1549232253
ECCN Code
EAR99
Pin Count
3
Risk Rank
9.61
Rohs Code
No
JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
IN-LINE
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Finish
TIN LEAD
Terminal Position
SINGLE
Number of Elements
1
Source Content uid
IRFI624B
Number of Terminals
3
Package Description
IN-LINE, R-PSIP-T3
Part Life Cycle Code
Obsolete
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Reach Compliance Code
compliant
Drain Current-Max (ID)
4.1 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
250 V
Operating Temperature-Max
150°C
Power Dissipation-Max (Abs)
49 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
75 mJ
Drain-source On Resistance-Max
1.1 Ω
Pulsed Drain Current-Max (IDM)
16.4 A
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Qty
Unit Price
Total Price
6078
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