IRFB3306G

Details

Manufacturer No IRFB3306G

Manufacturer 英飞凌-Infineon

Category 31V-60V NMOS

Datasheet Datasheet

Description 60V 单个 N 通道 HEXFET Power MOSFET, 采用无铅无卤素 TO-220AB 封装

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Type

Parameter

  • QG

    85.0nC

  • Qgd

    26.0nC

  • Package

    TO-220

  • Tj max

    175.0°C

  • ID  max

    110.0A

  • Mounting

    THT

  • Polarity

    N

  • VDS max

    60.0V

  • VGS max

    20.0V

  • Ptot max

    230.0W

  • RthJC max

    0.65K/W

  • RDS (on) max

    4.2mΩ

  • RDS (on)(@10V) max

    4.2mΩ

  • ID (@ TC=25°C) max

    160.0A

  • ID (@ TC=100°C) max

    110.0A

  • Budgetary Price €€/1k

    0.65

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Qty

Unit Price

Total Price

710

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