IRF6637

Details

Manufacturer No IRF6637

Manufacturer infineon

Category N-Channel Power MOSFET

Package DirectFET(M)

Datasheet Datasheet

Description

Price

Call

Add To Cart RFQ Buy Now

Type

Parameter

  • Package

    DirectFET(M)

  • Mounting

    SMD

  • Polarity

    N

  • Micro-stencil

    IRF66MP-25

  • Q<sub>gd</sub>

    4.0nC

  • T<sub>j</sub> max

    150.0°C

  • V<sub>DS</sub> max

    30.0V

  • V<sub>GS</sub> max

    20.0V

  • P<sub>tot</sub> max

    89.0W

  • R<sub>thJC</sub> max

    3.0K/W

  • Q<sub>G</sub>(typ @4.5V)

    11.0nC

  • I<sub>D </sub>(@25°C) max

    59.0A

  • Moisture Sensitivity Level

    1

  • V<sub>GS(th)</sub> min max

    1.8V 1.35V 2.35V

  • R<sub>DS (on)</sub>(@10V) max

    7.7m&#x2126;

  • R<sub>DS (on)</sub>(@4.5V) max

    10.8m&#x2126;

  • P<sub>tot</sub>(@ T<sub>A</sub>=25°C) max

    2.3W

Send RFQ

Qty

Unit Price

Total Price

12447

call

call

Substitute Products

IRF6637TRPBF

Infineon Technologies AG

Power Field-Effect Transistor, 14A I(D), 30V, 0.0077ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3

Send RFQ

IRF6637TR1PBF

International Rectifier

Power Field-Effect Transistor, 14A I(D), 30V, 0.0077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-2

Send RFQ

IRF6637TR1

International Rectifier

Power Field-Effect Transistor, 14A I(D), 30V, 0.0077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-2

Send RFQ

IRF6637PBF

Infineon Technologies AG

Power Field-Effect Transistor, 14A I(D), 30V, 0.0077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-2

Send RFQ

MSAFA75N10C

Microsemi FPGA & SoC

Power Field-Effect Transistor, 75A I(D), 100V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Send RFQ

IRF6641TRPBF

Infineon Technologies AG

Power Field-Effect Transistor, 4.6A I(D), 200V, 0.0599ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3

Send RFQ

IRF6724MTRPBF

Infineon Technologies AG

Power Field-Effect Transistor, 27A I(D), 30V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3

Send RFQ

IRF6725MTRPBF

Infineon Technologies AG

Power Field-Effect Transistor, 28A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3

Send RFQ

FSYC160D3

Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 70A I(D), 100V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD2, 3 PIN

Send RFQ

MSAER38N10A

Microsemi FPGA & SoC

Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Send RFQ

MSAFX20N60A

Microsemi FPGA & SoC

Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Send RFQ

2SK3441

Toshiba America Electronic Components

TRANSISTOR 75 A, 60 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-9F1B, SC-97, 4 PIN, FET General Purpose Power

Send RFQ

MSAFX75N10A

Microsemi FPGA & SoC

Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Send RFQ

MSAFX40N30A

Microsemi FPGA & SoC

Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Send RFQ

BSF053N03LTG

Infineon Technologies AG

Power Field-Effect Transistor, 16A I(D), 30V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2, 3 PIN

Send RFQ

FSYC055R1

Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 70A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD2, 3 PIN

Send RFQ

FSYE23A0R1

Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 8A I(D), 200V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD0.5, 3 PIN

Send RFQ

IRHNJ54230

International Rectifier

Power Field-Effect Transistor, 13A I(D), 200V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD0.5, 3 PIN

Send RFQ

IRHNB8260

International Rectifier

Power Field-Effect Transistor, 43A I(D), 200V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-3, 3 PIN

Send RFQ

FSYC163R1

Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 62A I(D), 130V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD2, 3 PIN

Send RFQ
Feature Products

As a leader in the electronic components industry, we are committed to providing the most comprehensive and accurate electronic component information and supplier prices.

Payment Method

©Copyright 2023 IZSOURCE All Rights Reserved