Details
Manufacturer No IRF3805PBF
Manufacturer Infineon
Category Power Field-Effect Transistors
Datasheet Datasheet
Description Power Field-Effect Transistor, 75A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
Price
$3.554
Type
Parameter
ECCN Code
EAR99
Rohs Code
Yes
Popularity
523
Subcategory
FET General Purpose Power
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-220AB
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Factory Lead Time
52 weeks
Terminal Position
SINGLE
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Number of Elements
1
Source Content uid
IRF3805PBF
Number of Terminals
3
Package Description
FLANGE MOUNT, R-PSFM-T3
Part Life Cycle Code
Active
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Reach Compliance Code
compliant
Drain Current-Max (ID)
75 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
55 V
Operating Temperature-Max
175°C
Operating Temperature-Min
-55°C
Power Dissipation-Max (Abs)
300 W
Transistor Element Material
SILICON
Drain Current-Max (Abs) (ID)
210 A
Avalanche Energy Rating (Eas)
940 mJ
Peak Reflow Temperature (Cel)
NOTSPECIFIED
Drain-source On Resistance-Max
0.0033 Ω
Pulsed Drain Current-Max (IDM)
890 A
Time@Peak Reflow Temperature-Max (s)
NOTSPECIFIED
Send RFQ
Qty
Unit Price
Total Price
1
$3.44738
$3.44738
50
$3.26968
$163.484
100
$3.16306
$316.306
1000
$3.0209
$3020.9
As a leader in the electronic components industry, we are committed to providing the most comprehensive and accurate electronic component information and supplier prices.
Payment Method