Details
Manufacturer No IRF3710ZSTRLPBF
Manufacturer International Rectifier
Category Power Field-Effect Transistors
Datasheet Datasheet
Description Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
Price
$2.242
Type
Parameter
ECCN Code
EAR99
Pin Count
3
Rohs Code
Yes
Popularity
1099
Pbfree Code
Yes
Subcategory
FET General Purpose Power
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-263AB
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Part Package Code
D2PAK
Terminal Position
SINGLE
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Number of Elements
1
Number of Terminals
2
Package Description
LEAD FREE, PLASTIC, D2PAK-3
Part Life Cycle Code
Transferred
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Reach Compliance Code
not_compliant
Drain Current-Max (ID)
59 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
100 V
Operating Temperature-Max
175°C
Moisture Sensitivity Level
1
Power Dissipation-Max (Abs)
160 W
Transistor Element Material
SILICON
Drain Current-Max (Abs) (ID)
59 A
Avalanche Energy Rating (Eas)
200 mJ
Peak Reflow Temperature (Cel)
260
Drain-source On Resistance-Max
0.018 Ω
Pulsed Drain Current-Max (IDM)
240 A
Time@Peak Reflow Temperature-Max (s)
30
Send RFQ
Qty
Unit Price
Total Price
1
$2.17474
$2.17474
50
$2.06264
$103.132
100
$1.99538
$199.538
1000
$1.9057
$1905.7
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