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IPP80N04S4L04AKSA1

Details

Manufacturer No IPP80N04S4L04AKSA1

Manufacturer Infineon Technologies

Category Transistors - FETs, MOSFETs - Single

Package TO-220-3

Datasheet Datasheet

Description MOSFET N-CH 40V 80A TO220-3-1

Price

$1.21568

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Type

Parameter

  • Mfr

    Infineon Technologies

  • Series

    OptiMOS™

  • Package

    Tube

  • FET Type

    N-Channel

  • Vgs (Max)

    +20V, -16V

  • Technology

    MOSFET (Metal Oxide)

  • FET Feature

    -

  • Mounting Type

    Through Hole

  • Package / Case

    TO-220-3

  • Product Status

    Active

  • Vgs(th) (Max) @ Id

    2.2V @ 35µA

  • Base Product Number

    IPP80N04

  • Operating Temperature

    -55°C~175°C(TJ)

  • Rds On (Max) @ Id, Vgs

    4.3mOhm @ 80A, 10V

  • Power Dissipation (Max)

    71W (Tc)

  • Supplier Device Package

    PG-TO220-3-1

  • Gate Charge (Qg) (Max) @ Vgs

    60 nC @ 10 V

  • Drain to Source Voltage (Vdss)

    40 V

  • Input Capacitance (Ciss) (Max) @ Vds

    4690 pF @ 25 V

  • Drive Voltage (Max Rds On, Min Rds On)

    4.5V, 10V

  • Current - Continuous Drain (Id) @ 25°C

    80A (Tc)

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Qty

Unit Price

Total Price

1

$1.17921

$1.17921

50

$1.11843

$55.9215

100

$1.08196

$108.196

1000

$1.03333

$1033.33

Substitute Products

IRF40B207

Infineon Technologies

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IPI80N04S4L-04

Infineon Technologies AG

Power Field-Effect Transistor, 80A I(D), 40V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN

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IPI80N04S4L04AKSA1

Infineon Technologies AG

Power Field-Effect Transistor, 80A I(D), 40V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN

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CSD18503KCS

Texas Instruments

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