Details
Manufacturer No IPP60R299CPXKSA1
Manufacturer Infineon Technologies AG
Category Power Field-Effect Transistors
Datasheet Datasheet
Description Power Field-Effect Transistor, 11A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
Price
$2.19
Type
Parameter
ECCN Code
EAR99
Pin Count
3
Rohs Code
Yes
Popularity
94
Pbfree Code
Yes
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-220AB
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Finish
TIN
Part Package Code
TO-220AB
Terminal Position
SINGLE
Number of Elements
1
Source Content uid
IPP60R299CPXKSA1
Number of Terminals
3
Package Description
FLANGE MOUNT, R-PSFM-T3
Part Life Cycle Code
Not Recommended
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Reach Compliance Code
compliant
Drain Current-Max (ID)
11 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
600 V
Operating Temperature-Max
150°C
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
290 mJ
Drain-source On Resistance-Max
0.299 Ω
Pulsed Drain Current-Max (IDM)
34 A
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Qty
Unit Price
Total Price
1
$2.1243
$2.1243
50
$2.0148
$100.74
100
$1.9491
$194.91
1000
$1.8615
$1861.5
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