IPP60R299CPXKSA1

Details

Manufacturer No IPP60R299CPXKSA1

Manufacturer Infineon Technologies AG

Category Power Field-Effect Transistors

Datasheet Datasheet

Description Power Field-Effect Transistor, 11A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN

Price

$2.19

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Type

Parameter

  • ECCN Code

    EAR99

  • Pin Count

    3

  • Rohs Code

    Yes

  • Popularity

    94

  • Pbfree Code

    Yes

  • JESD-30 Code

    R-PSFM-T3

  • Configuration

    SINGLE WITH BUILT-IN DIODE

  • JEDEC-95 Code

    TO-220AB

  • JESD-609 Code

    e3

  • Package Shape

    RECTANGULAR

  • Package Style

    FLANGE MOUNT

  • Surface Mount

    NO

  • Terminal Form

    THROUGH-HOLE

  • FET Technology

    METAL-OXIDE SEMICONDUCTOR

  • Operating Mode

    ENHANCEMENT MODE

  • Terminal Finish

    TIN

  • Part Package Code

    TO-220AB

  • Terminal Position

    SINGLE

  • Number of Elements

    1

  • Source Content uid

    IPP60R299CPXKSA1

  • Number of Terminals

    3

  • Package Description

    FLANGE MOUNT, R-PSFM-T3

  • Part Life Cycle Code

    Not Recommended

  • Qualification Status

    Not Qualified

  • Package Body Material

    PLASTIC/EPOXY

  • Polarity/Channel Type

    N-CHANNEL

  • Reach Compliance Code

    compliant

  • Drain Current-Max (ID)

    11 A

  • Transistor Application

    SWITCHING

  • DS Breakdown Voltage-Min

    600 V

  • Operating Temperature-Max

    150°C

  • Transistor Element Material

    SILICON

  • Avalanche Energy Rating (Eas)

    290 mJ

  • Drain-source On Resistance-Max

    0.299 Ω

  • Pulsed Drain Current-Max (IDM)

    34 A

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Qty

Unit Price

Total Price

1

$2.1243

$2.1243

50

$2.0148

$100.74

100

$1.9491

$194.91

1000

$1.8615

$1861.5

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