RoHS

Details

Type

OptiMOS 3 Power-Transistor

Brand

Infineon Technologies

Width

9.25 mm

Height

4.4 mm

Length

10 mm

Series

OptiMOS 3

Fall Time

12 ns

Packaging

MouseReel

Rise Time

20 ns

Tradename

OptiMOS

Technology

Si

Subcategory

MOSFETs

Unit Weight

0.139332 oz

Channel Mode

Enhancement

Manufacturer

Infineon

Product Type

MOSFET

Configuration

Single

Mounting Style

SMD/SMT

Package / Case

TO-263-3

Part # Aliases

SP000677896 IPB2N25N3GXT IPB200N25N3GATMA1

Transistor Type

1 N-Channel

Product Category

MOSFET

Qg - Gate Charge

86 nC

Number of Channels

1 Channel

Transistor Polarity

N-Channel

Pd - Power Dissipation

300 W

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Typical Turn-On Delay Time

18 ns

Typical Turn-Off Delay Time

45 ns

Id - Continuous Drain Current

64 A

Maximum Operating Temperature

175°C

Minimum Operating Temperature

-55°C

Forward Transconductance - Min

61 S

Rds On - Drain-Source Resistance

17.5 mOhms

Vds - Drain-Source Breakdown Voltage

250 V

Vgs th - Gate-Source Threshold Voltage

2 V

Factory Pack Quantity: Factory Pack Quantity

1000