Details
Manufacturer No HR1L2Q-AZ
Manufacturer Renesas Electronics Corporation
Category Power Bipolar Transistors
Datasheet Datasheet
Description 1A, 60V, PNP, Si, POWER TRANSISTOR
Price
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Type
Parameter
YTEOL
7.8
Objectid
1819302002
ECCN Code
EAR99
Risk Rank
7.02
JESD-30 Code
R-PSSO-F3
Configuration
SINGLE WITH BUILT-IN RESISTOR
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Surface Mount
YES
Terminal Form
FLAT
Case Connection
COLLECTOR
Terminal Position
SINGLE
Additional Feature
BUILT-IN BIAS RESISTOR RATIO IS 10
Number of Elements
1
Source Content uid
HR1L2Q-AZ
Number of Terminals
3
Part Life Cycle Code
Active
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
PNP
Reach Compliance Code
compliant
Transistor Application
SWITCHING
DC Current Gain-Min (hFE)
50
Operating Temperature-Max
150°C
Collector Current-Max (IC)
1 A
Transistor Element Material
SILICON
Collector-Emitter Voltage-Max
60 V
Peak Reflow Temperature (Cel)
NOTSPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOTSPECIFIED
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Unit Price
Total Price
23391
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