Details
Manufacturer No HN4B04J(TE85L,F)
Manufacturer Toshiba
Category Bipolar Transistors - BJT
Package SOT-25-5
Datasheet Datasheet
Description Bipolar Transistors - BJT Trans LFreq -120V PNP PNP -0.1A
Price
$0.108
Type
Parameter
RoHS
Details
Brand
Toshiba
Series
HN4B04
Packaging
Reel
Technology
Si
Subcategory
Transistors
Manufacturer
Toshiba
Product Type
BJTs - Bipolar Transistors
Configuration
Dual
Mounting Style
SMD/SMT
Package / Case
SOT-25-5
Product Category
Bipolar Transistors - BJT
Transistor Polarity
NPN, PNP
Pd - Power Dissipation
300 mW
DC Current Gain hFE Max
240
Gain Bandwidth Product fT
200 MHz, 300 MHz
Emitter- Base Voltage VEBO
5 V
Collector- Base Voltage VCBO
35 V
Continuous Collector Current
500 mA
Maximum DC Collector Current
500 mA
DC Collector/Base Gain hfe Min
70
Collector- Emitter Voltage VCEO Max
30 V
Collector-Emitter Saturation Voltage
100 mV
Factory Pack Quantity: Factory Pack Quantity
3000
Send RFQ
Qty
Unit Price
Total Price
1
$0.10476
$0.10476
50
$0.09936
$4.968
100
$0.09612
$9.612
1000
$0.0918
$91.8
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