HN3C10FE

Details

Manufacturer No HN3C10FE

Manufacturer Toshiba America Electronic Components

Category RF Small Signal Bipolar Transistors

Datasheet Datasheet

Description TRANSISTOR RF SMALL SIGNAL TRANSISTOR, ES6, 6 PIN, BIP RF Small Signal

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Type

Parameter

Objectid

1506968096
ECCN Code

EAR99
Pin Count

6
Risk Rank

9.82
Rohs Code

No
Subcategory

Other Transistors
JESD-30 Code

R-PDSO-F6
Configuration

SEPARATE, 2 ELEMENTS
JESD-609 Code

e0
Package Shape

RECTANGULAR
Package Style

SMALL OUTLINE
Surface Mount

YES
Terminal Form

FLAT
Terminal Finish

Tin/Lead (Sn/Pb)
Terminal Position

DUAL
Additional Feature

LOW NOISE
Number of Elements

2
Source Content uid

HN3C10FE
Number of Terminals

6
Package Description

SMALL OUTLINE, R-PDSO-F6
Part Life Cycle Code

Obsolete
Qualification Status

Not Qualified
Package Body Material

PLASTIC/EPOXY
Polarity/Channel Type

NPN
Reach Compliance Code

unknown
Highest Frequency Band

ULTRA HIGH FREQUENCY BAND
Transistor Application

AMPLIFIER
DC Current Gain-Min (hFE)

80
Operating Temperature-Max

125°C
Collector Current-Max (IC)

0.08 A
Power Dissipation-Max (Abs)

0.1 W
Transistor Element Material

SILICON
Collector-Emitter Voltage-Max

12 V
Transition Frequency-Nom (fT)

7000 MHz
Collector-Base Capacitance-Max

1.2 pF

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Qty

Unit Price

Total Price

6880

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