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HF50-12F

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Manufacturer No HF50-12F

Manufacturer Advanced Semiconductor Inc

Category RF Power Bipolar Transistors

Datasheet Datasheet

Description RF Power Bipolar Transistor, 1-Element, High Frequency Band, Silicon, NPN, 0.380 INCH, FM-4

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Type

Parameter

  • YTEOL

    5.2

  • Objectid

    1503189528

  • ECCN Code

    EAR99

  • Pin Count

    4

  • Risk Rank

    7.62

  • Subcategory

    Other Transistors

  • JESD-30 Code

    O-CRFM-F4

  • Configuration

    SINGLE

  • Package Shape

    ROUND

  • Package Style

    FLANGE MOUNT

  • Surface Mount

    NO

  • Terminal Form

    FLAT

  • Case Connection

    EMITTER

  • Country Of Origin

    USA

  • Terminal Position

    RADIAL

  • Number of Elements

    1

  • Number of Terminals

    4

  • Package Description

    FLANGE MOUNT, O-CRFM-F4

  • Part Life Cycle Code

    Active

  • Qualification Status

    Not Qualified

  • Package Body Material

    CERAMIC, METAL-SEALED COFIRED

  • Polarity/Channel Type

    NPN

  • Reach Compliance Code

    unknown

  • Highest Frequency Band

    HIGH FREQUENCY BAND

  • Transistor Application

    AMPLIFIER

  • DC Current Gain-Min (hFE)

    10

  • Operating Temperature-Max

    200°C

  • Collector Current-Max (IC)

    12 A

  • Power Dissipation-Max (Abs)

    183 W

  • Transistor Element Material

    SILICON

  • Collector-Emitter Voltage-Max

    18 V

  • Collector-Base Capacitance-Max

    300 pF

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Qty

Unit Price

Total Price

2767

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