HF30-28F

Details

Manufacturer No HF30-28F

Manufacturer Advanced Semiconductor Inc

Category RF Power Bipolar Transistors

Datasheet Datasheet

Description RF Power Bipolar Transistor, 1-Element, High Frequency Band, Silicon, NPN, 0.380 INCH, FM-4

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Type

Parameter

YTEOL

5.2
Objectid

1503189522
ECCN Code

EAR99
Pin Count

4
Risk Rank

7.61
Subcategory

Other Transistors
JESD-30 Code

O-CRFM-F4
Configuration

SINGLE
Package Shape

ROUND
Package Style

FLANGE MOUNT
Surface Mount

NO
Terminal Form

FLAT
Case Connection

EMITTER
Country Of Origin

USA
Terminal Position

RADIAL
Number of Elements

1
Number of Terminals

4
Package Description

FLANGE MOUNT, O-CRFM-F4
Part Life Cycle Code

Active
Qualification Status

Not Qualified
Package Body Material

CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type

NPN
Reach Compliance Code

unknown
Highest Frequency Band

HIGH FREQUENCY BAND
Transistor Application

AMPLIFIER
DC Current Gain-Min (hFE)

5
Operating Temperature-Max

200°C
Collector Current-Max (IC)

4.5 A
Power Dissipation-Max (Abs)

60 W
Transistor Element Material

SILICON
Collector-Emitter Voltage-Max

35 V
Collector-Base Capacitance-Max

65 pF

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Qty

Unit Price

Total Price

2875

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