Details
Manufacturer No FZT758TC
Manufacturer Diodes Incorporated
Category Single BJT Transistors
Package TO-261-4, TO-261AA
Datasheet Datasheet
Description
Price
Call
Type
Parameter
RoHS
yes
Mount
Surface Mount
Width
Height
Length
Pbfree
Weight
7.994566mg
Current
Voltage
hFE Min
HTS Code
8541.29.00.75
Polarity
ECCN Code
EAR99
Frequency
Inventory
2049
Lead Free
Lead Free
Packaging
Tape & Reel (TR)
Pin Count
Published
REACH SVHC
No SVHC
Part Status
Obsolete
Power - Max
RoHS Status
RoHS Compliant
Subcategory
Termination
JESD-30 Code
R-PDSO-G4
Configuration
SINGLE
JESD-609 Code
e3
Mounting Type
Surface Mount
Terminal Form
GULL WING
Current Rating
-500mA
Number of Pins
Package / Case
TO-261-4, TO-261AA
Case Connection
COLLECTOR
Contact Plating
Terminal Finish
MATTE TIN
Transistor Type
PNP
Base Part Number
FZT758
Lifecycle Status
Factory Lead Time
Power Dissipation
Terminal Position
DUAL
Number of Elements
1
Voltage - Rated DC
-400V
Radiation Hardening
Qualification Status
Not Qualified
Transition Frequency
50MHz
Element Configuration
Max Breakdown Voltage
Max Collector Current
500mA
Max Power Dissipation
2W
Operating Temperature
-55°C~150°CTJ
Polarity/Channel Type
PNP
Reach Compliance Code
unknown
Frequency - Transition
Gain Bandwidth Product
50MHz
Number of Terminations
4
Transistor Application
SWITCHING
Supplier Device Package
Max Operating Temperature
Min Operating Temperature
Emitter Base Voltage (VEBO)
-5V
Transistor Element Material
SILICON
Continuous Collector Current
Collector Base Voltage (VCBO)
-400V
Peak Reflow Temperature (Cel)
260
Vce Saturation (Max) @ Ib, Ic
500mV @ 10mA, 100mA
Current - Collector (Ic) (Max)
500mA
Collector Emitter Voltage (VCEO)
500mV
Current - Collector Cutoff (Max)
100nA
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Collector Emitter Breakdown Voltage
400V
Collector Emitter Saturation Voltage
-500mV
Time@Peak Reflow Temperature-Max (s)
40
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 200mA 10V
Voltage - Collector Emitter Breakdown (Max)
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Qty
Unit Price
Total Price
30450
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