Details
Manufacturer No FQP34N20L
Manufacturer Fairchild Semiconductor Corporation
Category Power Field-Effect Transistors
Datasheet Datasheet
Description Power Field-Effect Transistor, 31A I(D), 200V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Price
Call
Type
Parameter
ECCN Code
EAR99
Pin Count
3
Rohs Code
Yes
Popularity
53
Subcategory
FET General Purpose Power
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-220AB
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Finish
MATTE TIN
Part Package Code
TO-220AB
Terminal Position
SINGLE
Number of Elements
1
Source Content uid
FQP34N20L
Number of Terminals
3
Package Description
TO-220, 3 PIN
Part Life Cycle Code
Obsolete
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Reach Compliance Code
unknown
Drain Current-Max (ID)
31 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
200 V
Operating Temperature-Max
150°C
Power Dissipation-Max (Abs)
180 W
Transistor Element Material
SILICON
Drain Current-Max (Abs) (ID)
31 A
Avalanche Energy Rating (Eas)
640 mJ
Drain-source On Resistance-Max
0.08 Ω
Pulsed Drain Current-Max (IDM)
124 A
Send RFQ
Qty
Unit Price
Total Price
7992
call
call
As a leader in the electronic components industry, we are committed to providing the most comprehensive and accurate electronic component information and supplier prices.
Payment Method