Details
Manufacturer No FJP3307D-H2
Manufacturer ON Semiconductor
Category Power Bipolar Transistors
Datasheet Datasheet
Description Power Bipolar Transistor
Price
Call
Type
Parameter
YTEOL
7.2
Objectid
8311069695
ECCN Code
EAR99
Risk Rank
7.28
VCEsat-Max
3 V
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-220AB
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Fall Time-Max (tf)
700 ns
Number of Elements
1
Source Content uid
FJP3307D-H2
Number of Terminals
3
Package Description
FLANGE MOUNT, R-PSFM-T3
Part Life Cycle Code
Active
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Reach Compliance Code
compliant
Transistor Application
SWITCHING
Turn-off Time-Max (toff)
3700 ns
DC Current Gain-Min (hFE)
26
Operating Temperature-Max
150°C
Collector Current-Max (IC)
8 A
Power Dissipation-Max (Abs)
80 W
Transistor Element Material
SILICON
Collector-Emitter Voltage-Max
400 V
Send RFQ
Qty
Unit Price
Total Price
1385
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