FJP3307D-H2

Details

Manufacturer No FJP3307D-H2

Manufacturer ON Semiconductor

Category Power Bipolar Transistors

Datasheet Datasheet

Description Power Bipolar Transistor

Price

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Type

Parameter

  • YTEOL

    7.2

  • Objectid

    8311069695

  • ECCN Code

    EAR99

  • Risk Rank

    7.28

  • VCEsat-Max

    3 V

  • JESD-30 Code

    R-PSFM-T3

  • Configuration

    SINGLE WITH BUILT-IN DIODE

  • JEDEC-95 Code

    TO-220AB

  • Package Shape

    RECTANGULAR

  • Package Style

    FLANGE MOUNT

  • Surface Mount

    NO

  • Terminal Form

    THROUGH-HOLE

  • Terminal Position

    SINGLE

  • Fall Time-Max (tf)

    700 ns

  • Number of Elements

    1

  • Source Content uid

    FJP3307D-H2

  • Number of Terminals

    3

  • Package Description

    FLANGE MOUNT, R-PSFM-T3

  • Part Life Cycle Code

    Active

  • Package Body Material

    PLASTIC/EPOXY

  • Polarity/Channel Type

    NPN

  • Reach Compliance Code

    compliant

  • Transistor Application

    SWITCHING

  • Turn-off Time-Max (toff)

    3700 ns

  • DC Current Gain-Min (hFE)

    26

  • Operating Temperature-Max

    150°C

  • Collector Current-Max (IC)

    8 A

  • Power Dissipation-Max (Abs)

    80 W

  • Transistor Element Material

    SILICON

  • Collector-Emitter Voltage-Max

    400 V

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Qty

Unit Price

Total Price

1385

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Substitute Products

FJP3307DH2TU

Fairchild Semiconductor Corporation

Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, LEAD FREE, TO-220, 3 PIN

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