Details
Manufacturer No FDP80N06
Manufacturer Fairchild
Category Power Field-Effect Transistors
Datasheet Datasheet
Description Power Field-Effect Transistor, 80A I(D), 60V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN
Price
$2.1
Type
Parameter
HTS Code
8541.29.00.95
ECCN Code
EAR99
Pin Count
3
Rohs Code
Yes
Brand Name
Fairchild Semiconductor
Popularity
436
Pbfree Code
Yes
Subcategory
FET General Purpose Powers
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-220AB
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Finish
MATTE TIN
Part Package Code
TO-220
Terminal Position
SINGLE
Number of Elements
1
Source Content uid
FDP80N06
Number of Terminals
3
Package Description
FLANGE MOUNT, R-PSFM-T3
Part Life Cycle Code
Transferred
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Reach Compliance Code
compliant
Drain Current-Max (ID)
80 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
60 V
Manufacturer Package Code
TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
Operating Temperature-Max
175°C
Power Dissipation-Max (Abs)
176 W
Transistor Element Material
SILICON
Drain Current-Max (Abs) (ID)
80 A
Avalanche Energy Rating (Eas)
480 mJ
Drain-source On Resistance-Max
0.01 Ω
Pulsed Drain Current-Max (IDM)
320 A
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Qty
Unit Price
Total Price
1
$2.037
$2.037
50
$1.932
$96.6
100
$1.869
$186.9
1000
$1.785
$1785
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