Details
Manufacturer No FDB3672-F085
Manufacturer ON Semiconductor
Category Power Field-Effect Transistors
Datasheet Datasheet
Description N-Channel PowerTrench® MOSFET 100V, 44A, 28mΩ, TO-263 2L (D2PAK), 800-REEL, Automotive Qualified
Price
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Type
Parameter
ECCN Code
EAR99
Brand Name
onsemi
Popularity
96
Pbfree Code
Yes
Subcategory
FET General Purpose Power
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-263AB
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Matte Tin (Sn) - annealed
Part Package Code
TO-263 2L (D2PAK)
Terminal Position
SINGLE
Number of Elements
1
Source Content uid
FDB3672-F085
Number of Terminals
2
Package Description
SMALL OUTLINE, R-PSSO-G2
Part Life Cycle Code
Lifetime Buy
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Reach Compliance Code
not_compliant
Drain Current-Max (ID)
7.2 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
100 V
Manufacturer Package Code
418AJ
Operating Temperature-Max
175°C
Moisture Sensitivity Level
1
Power Dissipation-Max (Abs)
120 W
Transistor Element Material
SILICON
Drain Current-Max (Abs) (ID)
44 A
Avalanche Energy Rating (Eas)
120 mJ
Peak Reflow Temperature (Cel)
245
Drain-source On Resistance-Max
0.047 Ω
Time@Peak Reflow Temperature-Max (s)
30
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Unit Price
Total Price
13705
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